RALEIGH, NC – Rising power density in modern electronics is pushing traditional thick film chip resistors beyond thermal limits. In applications where high-power dissipation, electrical isolation, and long-term stability must coexist, aluminum nitride (AlN)–based thick film chip resistors are becoming the preferred solution.
Stackpole Electronics' RMAN series uses aluminum nitride substrates with thermal conductivity several times higher than standard alumina, enabling faster heat removal while maintaining electrical insulation, according to the company. This allows higher usable power density, lower operating temperature, and improved stability in demanding environments.
RMAN resistors are purpose-designed for applications where thermal performance directly affects electrical behavior and reliability. Typical uses include snubber and gate resistors in IGBT, SiC, and GaN power modules; pre-charge and discharge circuits in industrial and EV drives; and current sensing and bleeder functions in power supplies and inverters.
The series is also well suited for automotive electronics such as battery management systems, onboard chargers, DC‑DC converters, and inverter gate drives, where thermal cycling and continuous load demand stable resistance characteristics.
In RF and microwave circuits, RMAN devices support terminations, attenuators, and dummy loads by maintaining impedance stability under high dissipation. Additional applications include high-power LED and laser drivers, aerospace and defense power conditioning, and high-voltage divider networks where temperature gradients can degrade accuracy.
RMAN chip resistors deliver power ratings up to 2.4 W in 1206 and 3.4 W in 2512 packages while maintaining safe hotspot temperatures—performance difficult to achieve with alumina-based thick film designs.
For more information, visit https://www.seielect.com/.
